Direct mapping of local Seebeck coefficient in 2D material nanostructures via scanning thermal gate microscopy

Scanning capacitance microscopy of nanostructures

A theory is developed for scanning capacitance microscopy sSCMd of samples containing quantum wells, nanowires, and nanodots. The observed SCM image does not reproduce the geometric characteristics of the system but can be used for extracting some important information. For quantum wells and nanowire arrays, SCM gives an opportunity to determine the doping level of nanostructures. For individua...

Theory of scanning gate microscopy

Cosimo Gorini,1,2 Rodolfo A. Jalabert,1 Wojciech Szewc,1 Steven Tomsovic,3 and Dietmar Weinmann1 1Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France 2Universität Augsburg, Institut für Physik, Theoretische Physik II, D-86135 Augsburg, Germany 3Department of Physics and Astronomy, PO B...

[1011] Scanning Thermal Microscopy on 2D Materials at cryogenic temperatures

Thermal transport in Graphene is of great interest due to its high thermal conductivity, for both fundamental research and future applications such as heat dissipation in electronic devices. Although, the thermal conductivity of graphene can reduce depending on the coupling to the substrate [1]. In this work, we report high-resolution imaging of nanoscale thermal transport in single and few lay...

Seebeck coefficient of one electron

Scanning probe direct-write of germanium nanostructures.

Figure SI-1. Line cross-sections corresponding to the AFM images in Figures 1b and 1c. Ge nanoribbons were written at 12 V and 1 !m s-1 and 14 V and 100 !m s-1 respectively. Figure SI-2. Current voltage characteristics measured during deposition. Voltage is measured on the sample. No deposition occurs for negative sample voltages, nor positive sample voltages below 6 volts.